Design, growth, and operation of an unipolar light emitting diode based on the material system GaAs/AlGaAs is reported. We present mid-infrared transmission, photocurrent, and electroluminescence measurements on a quantum cascade structure with intersubband transition energies greater than the optical phonon energy. Electroluminescence powers up to a few nanowatts at 6.9 μm have been measured.
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Strasser et al. (1997) studied this question.
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