N-type organic thin-film transistor with high field-effect mobility based on a N,N′-dialkyl-3,4,9,10-perylene tetracarboxylic diimide derivative

N , N ′ -dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8H) thin films have been implemented into organic thin-film field-effect transistors. Mobilities up to 0.6 cm2 V−1 s−1 and current on/off ratios >105 were obtained. Linear regime mobilities were typically half of those measured in the saturation regime. X-ray studies in reflection mode suggest a spacing of ∼20 Å for thin evaporated films of PTCDI-C8H, which is consistent with the value of ∼21±2 Å obtained from our simulations when an interdigitated packing structure is assumed.