An analysis is presented of the potential efficiency of epitaxial silicon cells grown on upgraded metallurgical grade substrates. The analysis is done varying the different base and substrate parameters. It is concluded that with reasonably good lifetime parameters the combination of a high doping in the substrate and of a thin active epitaxial zone can lead to better efficiencies than those achievable with conventional non epitaxial cells.
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Ĺuque et al. (1988) studied this question.
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