The interplay of carrier heating effects and transverse variations of the carrier distribution functions has a significant influence on the ultrafast emission dynamics of semiconductor vertical cavity surface emitting lasers. This interplay can lead to dynamic overshooting and oscillations (here at 200 GHz) even for lasing on a single transverse and single longitudinal mode. A simple equivalent model is a cavity containing the gain medium and a saturable absorber. The numerical results can directly be compared with recently published experiments.
No takes yet. Share an insight, caveat, or question.
Mücke et al. (1998) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: