Light emission normal to the surface of a GaAs/AlGaAs wafer has been obtained by fabricating edge-emitting double-heterostructure diode lasers with a monolithic 45° deflector adjacent to one of the laser facets. The deflector and adjacent facet were formed by ion beam assisted etching, while the other facet was cleaved. Diode laser/deflector devices with two etched laser facets could be used to fabricate monolithic two-dimensional laser arrays.
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Windhorn et al. (1986) studied this question.
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