Structural and optical properties of homogeneous Cu(In,Ga)Se₂ thin films prepared by thermal reaction of InSe/Cu/GaSe alloys with elemental Se vapour

In this study, thin films of Cu(In,Ga)Se 2 were prepared by the controlled reaction of thermally evaporated InSe/Cu/GaSe precursors with elemental Se vapour in vacuum. We indicate that this classical two-step growth process can be utilized to produce homogeneous single-phase chalcopyrite absorber films with superior structural properties. X-ray diffraction studies indicated that the interplanar spacing d (112) decreases linearly with an increase in the Ga/[In + Ga] atomic ratio due to homogeneous incorporation of gallium into the chalcopyrite lattice. Optical studies revealed the expected systematic increase in the band gap with increasing gallium concentration, once again confirming the monophasic nature of the alloys.