We report on the fabrication of organic thin-film transistors (OTFTs) with a reverse-offset-printed Ag metal source/drain (S/D) electrode pattern. The printed electrodes had a channel length of less than 5 μ m and resistivity of 3 × 10 −6 Ω cm. The OTFTs were fabricated from regioregular poly(3-hexylthiophene) as the semiconductor and poly(methyl methacrylate) as the gate insulator. The transfer and output characteristics of a top-gate OTFT with a channel length of 5 μ m were evaluated. Here we discuss in detail the technological challenges encountered with reverse offset printing and the failure modes.
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Kim et al. (2011) studied this question.