Characterization and modeling of stacked MIM on‐chip capacitors with high‐capacitance density up to 20 GHz frequency region

In this article, double‐stacked and triple‐stacked metal‐insulator‐metal (MIM) capacitors fabricated in 0.18 μm CMOS process are reported. These provide high‐capacitance density of 2 fF/μm 2 and 3.2 fF/μm 2 and excellent dc and RF characteristics, respectively. The lumped circuit model of the stacked MIM capacitors is presented for high‐frequency applications up to 20 GHz. The stacked MIM capacitors offer a reduced chip area for a given capacitance value and are expected to be a viable choice for integration of RF/mixed‐mode circuits in a single chip.