1380 V β-Ga₂O₃ trench MIS-type Schottky barrier diode with ultra-low leakage current

A β -Ga 2 O 3 trench Schottky barrier diode (T-SBD) with double-field-plates terminal and cost-effective Al 2 O 3 /SiN dielectric layer is fabricated. Owing to the shielding effect of the trench metal–Insulator–semiconductor structure, compared with conventional SBD (C-SBD), the breakdown voltage of the T-SBD is improved from 700 V (C-SBD) to 1380 V (T-SBD) with specific on-resistance ( R on,sp ) being 6.06 mΩ·cm 2 . Compared to C-SBD, Baliga’s figure of merit for the T-SBD is improved from 131 MW cm −2 (C-SBD) to 314 MW cm −2 (T-SBD). Moreover, the leakage current of T-SBD is significantly reduced from ∼0.33 mA cm −2 (C-SBD) to ∼38 μ A cm −2 (T-SBD).