32 × 32 two-dimensional array of vertical to surface transmission electrophotonic devices with a pnpn structure

A novel electrophotonic mode of operation reduces both the memory holding power and the optical switching energy to 26fJ at a 9 ns writing period in vertical to surface transmission electrophotonic devices with a pnpn structure (pnpn-VSTEPs). An integration of 1024 pnpn elements in a two-dimensional matrix has been demonstrated for these electrophotonic operations by using a thick metal line process and a low temperature dielectric film deposition for improving characteristics uniformity.