Junction temperature estimation of IGBT module via a bond wires lift‐off independent parameter V gE‐np

An electrical method for junction temperature estimation of insulated‐gate bipolar transistors (IGBTs) is presented in this study. Owing to the parasitic inductance between bond wire and main emitter terminal L E . The temperature‐dependent falling collector current during turn‐off transition would cause a negative voltage drop in the gate‐main emitter voltage waveform v gE . Therefore, this negative voltage drop V gE‐np is proportional to the junction temperature. A double‐pulse test circuit is developed to verify the accuracy and feasibility of the proposed method. The impacts of collector–emitter voltage V ce , collector current I c and bond‐wires cut‐off are also be discussed theoretically and experimentally. The experimental results show that the proposed V gE‐np has a linear relationship with junction temperature as theoretical analysis and it is a bond‐wires cut‐off independent parameter in some special test point, which offers an effective way to estimate junction temperature without package destruction. The advantages of the proposed method include good linearity, bond‐wires failure immunity and adequate sensitivity with junction temperature.