Characterisation of sol–gel derived PZT films prepared at low temperature

Lead zirconate titanate (PZT) thin films doped with C 60 were fabricated on Pt/Ti/SiO 2 /Si substrates at 400–500°C, using solutions prepared by the sol–gel method. Formation of pyrochlore was suppressed, and 〈001〉 preferential orientation of perovskite phase was developed by adding C 60 dissolved in toluene. The perovskite formation temperature was also markedly lowered by using the toluene solution of C 60 .