Characterization and photoelectrochemical studies of CuInS2 thin films prepared by sulphurization of CuIn alloy

Thin films of CulnS2, prepared by sulphurization of electroless deposited Culn alloy at different conversion temperatures and time durations, have been characterized by XRD and AES. The films converted at 250 and 350 °C are of mixed phase while those converted in the range 450–550 °C are of single-phase sphalerite with (112) as the preferred orientation. Detailed photoelectrochemical investigations show the best films are those obtained at a conversion temperature at 450 °C.