Preparation by m.b.e. of GaAs-AlxGa1–xAs transverse junction lasers on semi-insulating substrates is described. Pulsed current thresholds of 32 mA have been achieved at room temperature (25°C) in initial devices. Single-mode c.w. operation has been achieved with heat-sink temperatures up to 35°C.
No takes yet. Share an insight, caveat, or question.
Lee et al. (1980) studied this question.