In this work, the micro-photoluminescence (PL) technique is applied to study the thermal transport properties of single-layer transition-metal dichalcogenide materials WS 2 grown by chemical vapor deposition. By comparing the temperature-dependent Raman spectrum with the PL spectrum, we prove that the PL implementation can provide both higher temperature sensitivity (4–5 times) and stronger signal response (∼100 times), which may largely reduce the uncertainties and time consumption for thermal conductivity measurements. By use of temperature- and power-dependent PL measurements, the in-plane thermal conductivity of the suspended single-layer WS 2 is derived as ∼63 ± 7 W/m·K. Moreover, by examining the power-dependent PL response of the SiO 2 /Si substrate-supported single-layer WS 2 using different sizes of laser spot radius, the thermal conductivity κ and the interface thermal conductance g of the supported single-layer WS 2 are determined as ∼32.8 ± 3.8 W/m·K and 4.4 ± 0.4 KW/m 2 ·K simultaneously, respectively. Our research demonstrates that the micro-PL approach can be an effective contactless way to investigate the thermal transport properties of single- and few-layer TMDC materials.
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Sang et al. (2022) studied this question.