On Epitaxy of Ultrathin Ni[sub 1−x]Pt[sub x] Silicide Films on Si(001)

Epitaxial films readily grow upon thermal treatment of 2 nm thick Ni and films deposited on Si(001). For annealing at , the films are 5.4–5.6 nm thick with in resistivity. At , the epitaxial films become 6.1–6.2 nm thick with a resistivity of . Structural analysis reveals twins, facet wedges, and thickness inhomogeneities in the films grown at . For higher temperature, an almost defect-free film with a flat and sharp interface is formed. The presence of Pt makes the aforementioned imperfections more persistent.