We have studied the influence of matrix materials on the self-organization of InAs nanostructures grown on InP substrates by molecular-beam epitaxy. Our results show that InAs quantum dots are formed on InAlGaAs, whereas quantum-wire-like structures are produced on InAlAs and InGaAs. Tuning from vertical anticorrelation in InAs/InAlAs superlattices to vertical correlation in InAs/InGaAs and InAs/InAlGaAs superlattices is observed, which is explained by the size effects in the nanostructure–nanostructure interaction.
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Li et al. (2002) studied this question.
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