Answers are grounded in this paper and cite their sources.
High-density InAs nanowires embedded in an In0.52Al0.48As matrix are fabricated in situ by molecular beam epitaxy on (100) InP. The average cross section of the nanowires is 4.5×10 nm2. The linear density is as high as 70 wires/μm. The spatial alignment of the multilayer arrays exhibit strong anticorrelation in the growth direction. Large polarization anisotropic effect is observed in polarized photoluminescence measurements.
No takes yet. Share an insight, caveat, or question.
Li et al. (1999) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: