Answers are grounded in this paper and cite their sources.
The optical properties of InAs quantum dots (QDs) with a GaAs, an InAlAs, or an InAlAsSb overgrown layer are studied. For the InAs QDs with an InAlAsSb overgrown layer, their room temperature photoluminescence intensity is enhanced by as much as 4.5-fold compared to that of the QDs with an InAlAs one while maintaining similar narrow linewidth (26meV) and large ground-to first excited-state separation (103meV). The increase in radiative efficiency of the InAs∕InAlAsSb heterostructure is attributed to its better material quality due to the surfactant nature of Sb adatoms.
No takes yet. Share an insight, caveat, or question.
Chiu et al. (2007) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: