We fabricated broad-area laser diodes comprising 30-layer stacks of InAs quantum dots (QDs) by using strain compensation. The devices exhibited ground-state lasing at 1529 nm in pulsed mode with a high characteristic temperature of 113 K around room temperature (20°C-80°C). Ground-state lasing was achieved because of the high QD density afforded by strain compensation.
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Akahane et al. (2010) studied this question.
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