The first fabrication of n- and p-type Ga0.49In0.51P/Ga(In)As lattice matched and strained HIGFET structures grown by MOCVD

The authors report the first fabrication of Ga 0.49 In 0.51 P/Ga x In 1-x As n- and p-type lattice matched (x=1) and strained (x-0.85) heterostructure insulated gate field effect transistor (HIGFET) grown by low-pressure metal-organic chemical vapour deposition (LP MOCVD). The growth conditions of Ga 0.49 In 0.51 P have been optimised to produce a high-purity insulator material. The n-type devices show good pinch-off characteristics, with a small variation of threshold voltage with temperature consecutive to the low trap density in that system. High transconductance values have been obtained on p-type devices, due to the large valence band discontinuity between GaAs and Ga 0.49 In 0.51 P.