Segregation in InxGa₁−xAs/GaAs Stranski–Krastanow layers grown by metal–organic chemical vapour deposition

Using quantitative high-resolution transmission electron microscopy we studied the chemical morphology of wetting layers in In x Ga1− x As/GaAs quantum dot structures which were optimized for applications to optical devices operating around 1.3 µm. The samples are grown by low-pressure metal–organic chemical vapour deposition on GaAs substrates. The In concentration profiles of the wetting layers are evaluated with the composition evaluation by lattice fringe analysis method. The profiles reveal a clear signature of segregation. A fit of the profiles with the Muraki et al. model for segregation reveals a segregation efficiency R = 0.65 ± 0.05 at the growth temperature of 550°C, which is significantly lower than segregation efficiencies observed in samples grown by molecular beam epitaxy at similar temperatures.