Molecular beam epitaxy growth of InAs/InGaAs QD structures on GaAs substrates as well as fabrication and performance of long‐wavelength QD edge‐emitting lasers and VCSELs are discussed. 1.3 µm QD VCSELs were successfully fabricated from the structures with several QD planes inserted into the optical microcavity with AlO–GaAs and AlGaAs–GaAs Bragg reflectors. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
No takes yet. Share an insight, caveat, or question.
Ustinov et al. (2005) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: