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The use of multiple quantum wells and GaAs barriers favours the temperature stability and modulation bandwidth of GaInNAs lasers. It is shown that a very low threshold current density and a high characteristic temperature can be achieved for GaInNAs/GaAs double quantum well lasers, emitting at 1.28 µm, when grown by molecular beam epitaxy under favourable conditions.
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Wei et al. (2005) studied this question.
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