Characteristics of Ba-Doped PbS Thin Films Prepared by the SILAR Method

In this material production research, undoped and Ba-doped nanostructured PbS lms are fabricated on glass surfaces by SILAR method.The structural, optical and morphological properties of the lms are examined via scanning electron microscopy, UV-vis spectrophotometry and X-ray diraction analysis.Scanning electron microscopy analysis revealed that Ba-doping concentration inuences the size of the thin lm's nanoparticles.Xray diraction results showed that all of the thin lms are in a face centered cubic structure.Optical studies, in the room temperature, revealed that the optical band gap of the lms increases as Ba-doping concentration is increased.The intercept values on the energy axis in the range of 1.86 eV and 2.12 eV for 1% and 8% Ba-doped PbS lms respectively.As a result, it is concluded that the structural, optical and morphological properties of the fabricated thin lms are directly depend on the Ba doping ratio.