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The electron effective mass of InAlGaAs lattice matched to InP has been determined as a function of Al content. The electron effective mass is obtained from far-infrared optically detected cyclotron resonance (ODCR). In ODCR, the carriers are provided by optical pumping, and hence no doping is necessary. Unlike previous reports, we are able to detect the cyclotron resonance signal of a thin intrinsic epilayer at low temperature. Thus corrections of nonparabolicity are not required. In addition, from photoluminescence measurement, we determine the band-gap energy. Both the effective mass and band-gap energy show a nonlinear variation with Al composition.
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Chen et al. (1995) studied this question.
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