High-quality GaAs was grown by gas source MBE using TEGa (triethylgallium) and metal arsenic. An unintentionally doped GaAs layer (6.5 µm thick) exhibited p-type conduction with the carrier concentration as low as 8×10 14 cm -3 (room temperature) and highest hole mobility of 5930 cm 2 /Vs (39 K). The carrier concentration in GaAs obtained is the lowest ever reported for GaAs grown by gas source MBE or MO–MBE.
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Kondo et al. (1986) studied this question.
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