Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy

Si atomic-planar-doping in GaAs was studied with the use of molecular beam epitaxy. It was found that doped Si impurities are entirely activated with a sheet doping concentration of up to about 3×10 12 cm -2 . A heavy doping experiment in GaAs was conducted by repeating Si planar doping. The average electron concentration of the n + -GaAs layer was as high as 1.14×10 19 cm -3 which is comparable to the highest value ever reported for Si-doped GaAs.