Active metasurface terahertz deflector with phase discontinuities

Metasurfaces provide great flexibility in tailoring light beams and reveal unprecedented prospects on novel functional components. However, techniques to dynamically control and manipulate the properties of metasurfaces are lagging behind. Here, for the first time to our knowledge, we present an active wave deflector made from a metasurface with phase discontinuities. The active metasurface is capable of delivering efficient real-time control and amplitude manipulation of broadband anomalous diffraction in the terahertz regime. The device consists of complementary C-shape split-ring resonator elements fabricated on a doped semiconductor substrate. Due to the Schottky diode effect formed by the hybrid metal-semiconductor, the real-time conductivity of the doped semiconductor substrate is modified by applying an external voltage bias, thereby effectively manipulating the intensity of the anomalous deflected terahertz wave. A modulation depth of up to 46% was achieved, while the characteristics of broadband frequency responses and constant deflected angles were well maintained during the modulation process. The modulation speed of diffraction amplitude reaches several kilohertz, limited by the capacitance and resistance of the depletion region. The scheme proposed here opens up a novel approach to develop tunable metasurfaces.