The etch rates of a variety of polymer films have been determined in and discharges under high pressure (0.55–1.1 Torr) plasma etching conditions. In general, polymers with aromatic structure were found to etch at 0.25–0.5 the rate of nonaromatic polymers. This result and other facets of the etch data are discussed relative to the development of future positive‐working E‐beam/RIE resists.
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Lester A. Pederson (1982) studied this question.