CoMET: Composite-Input Magnetoelectric- Based Logic Technology

This paper proposes composite-input magnetoelectric-based logic technology (CoMET), a fast and energy-efficient spintronics device for logic applications. An input voltage is applied to a ferroelectric (FE) material, in contact with a composite structure—a ferromagnet (FM) with in-plane magnetic anisotropy placed on top of an intragate FM interconnect with perpendicular magnetic anisotropy (PMA). Through the magnetoelectric (ME) effect, the input voltage nucleates a domain wall (DW) at the input end of the PMA-FM interconnect. An applied current then rapidly propagates the DW toward the output FE structure, where the inverse-ME effect generates an output voltage. This voltage is propagated to the input of the next CoMET device using a novel circuit structure that enables efficient device cascading. The material parameters for CoMET are optimized by systematically exploring the impact of parameter choices on device performance. Simulations on a 7-nm CoMET device show fast, low-energy operation, with a delay/energy of 99 ps/68 aJ for INV and 135 ps/85 aJ for MAJ3.