Fabrication of ultra‐high‐density InAs quantum dots using the strain‐compensation technique

Highly‐stacked InAs quantum dots (QDs) were successfully grown on InP(311)B substrates using a novel strain‐compensation technique. The number of stacked layer was increased to 300, the density of the QDs reaches 2 × 10 13 /cm 2 ; this value cannot be obtained using conventional QD fabrication techniques. In a highly stacked sample, the QDs show good size uniformity with a lateral and vertical ordered structure. In addition, this sample exhibits strong 1.55 µm photoluminescence (PL) emission at room temperature.