In this paper, the ongoing research and development activities on future nonvolatile memory technologies incorporating new switching materials are described. Memory concepts based on switching effects in inorganic and organic materials as well as in single molecules and carbon nanotubes are reviewed. Examples of the typical aspects that must be covered during the development of a memory incorporating a new switching material are illustrated using the results from the development of a ferroelectric memory.
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Pinnow et al. (2004) studied this question.
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