Capacitance-Voltage (C-V) characteristics of Pt/(Ba, Sr)TiO3/Pt MIM capacitor were investigated. Hysteresis observed in the C-V characteristics of BST films was analyzed. The dependence of the C-V characteristics on the sweeping direction of applied voltage indicates that the hysteresis is caused by the interface trap charge between the BST film and the Pt electrode. A new method was proposed to characterize the interface traps from the hysteresis of C-V characteristics of MIM capacitor. The trapped electron density near the lower interface of the BST thin films was constant (∼ 3 × 1012cm−2) for all the film thickness ranging from 500 Å to 2000 Å, which suggests that the hysteresis is not caused by the bulk property of the BST film but caused by the interfacial property.
No takes yet. Share an insight, caveat, or question.
Kwak et al. (1996) studied this question.
Synapse has enriched 2 closely related papers on similar clinical questions. Consider them for comparative context: