The growth of epitaxial MgO films on Sb-passivated (001)GaAs using pulsed laser deposition has been investigated. The temperature at which the Sb-passivation layer was desorbed was found to have a significant effect on the interfacial properties of MgO/GaAs heterostructures. Heating the substrates to 350–380 °C in vacuum resulted in a (1×3) GaAs surface reconstruction suitable for the growth of epitaxial MgO films. However, residual Sb was found to persist on the GaAs surface at temperatures as high as 500 °C. MgO growth after Sb desorption at 350–380 °C resulted in a nonuniform interfacial layer which varied in thickness from ∼0.1 to 1.5 nm, whereas substrates heated to 500 °C prior to MgO growth displayed abrupt interfaces. Capacitance–voltage measurements indicated a qualitative difference in the interfacial electronic properties for the two cases.
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Tarsa et al. (1995) studied this question.
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