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We have measured the temperature dependence of parametric x-ray radiation (PXR) from a Si single crystal bombarded by 900-MeV electrons. The radiation intensity is appreciably enhanced when the crystal is cooled to liquid-nitrogen temperature as compared with the case for room temperature. The enhancement factors are larger for the higher-order reflections and are quantitatively consistent with the assumption that the PXR intensities are proportional to the squared Debye-Waller factor.
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Amosov et al. (1993) studied this question.
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