The Ni-NiO-Cu Metal-Insulator-Metal (MIM) tunnel diodes were fabricated through electrochemical deposition and thermal oxidation in the confined nanochannels of anodic aluminum oxide templates. Scanning electron microscopy (SEM) investigation reveals the diodes have a contact area of about 0.008 μm 2 , and transmission electron microscopy (TEM) shows that the thickness of NiO insulator layers ranges from 2 nm to 12 nm. The current-voltage ( I-V ) characteristics of the MIM diodes as prepared exhibit the nonlineara behavior with values strongly depending on the thermal oxidation time and the best zero bias sensitivity is 7.3 V −1 at bias voltage (V bias ) of 0.1 V.
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Zhang et al. (2012) studied this question.