Thermal-oxidation-induced strain in 31P+-implanted Si〈100〉

Si〈100〉 was implanted by 31P+ and annealed in Ar and O2 at 630–1150 °C. In O2 above 1000 °C a characteristic strain developed in the near-surface layer depending on the temperature of the heat treatment, but a similar effect was not observed after annealing in Ar. The formation of strain is explained by a nonperfect near-surface regrowth.