We report measurements of the Hall effect in the localized two-dimensional electron system at low Landau-level filling factors {ν}, where the diagonal resistivity is thermally activated, including the regime previously identified as a pinned Wigner crystal. We find that the Hall resistivity is universally given by the classical, free-electron gas value of h/{ν}e² (within experimental uncertainty of 5%) even when the diverging diagonal resistivity reaches {~}100h/{ν}e². This implies that both Hall and diagonal conductivities, calculated via matrix inversion, approach zero in the localized regime.
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Goldman et al. (1993) studied this question.