In this paper, Si and oxygen diffusions as well as SiO2 reduction reaction in HfO2/SiO2/Si stacks are examined in detail for fully understanding the SiO2-IL scavenging process. A 29Si isotope tracing experiment confirms that Si in SiO2-IL is mostly emitted from the HfO2 surface. In addition, the reaction of oxygen from SiO2 with VO in HfO2 is suggested. Furthermore, it is reported that the Si substrate is not changed at all in the SiO2-IL scavenging by simultaneously comparing a Si surface between with and without scavenged parts. Based on these results, a kinetic model for the SiO2-IL scavenging in HfO2/SiO2/Si stacks is proposed.
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Li et al. (2016) studied this question.
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