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We report medium energy ion scattering results that determine the extent of Hf incorporation in the interfacial region of HfO2∕Si(001) films. The lack of change in the Hf backscatter peak after interlayer growth by in situ oxidation indicates extremely low levels of Hf incorporation. We conclude that silicate formation is not a significant factor in determining capacitances of HfO2∕Si(001) structures, provided that the deposition technique does not involve creation of a silicide as an intermediate step.
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Copel et al. (2004) studied this question.
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