A four-channel, low-power CMOS charge preamplifier for silicon detectors with medium value of capacitance

We present a low-power CMOS charge preamplifier, suitable for use with silicon detectors having a medium value of capacitance. Noise considerations and a long decay time of the output signal command the use of unusually large devices such as an input transistor having W=10000 /spl mu/m and a 7-M/spl Omega/ feedback resistor. Both of these devices were integrated inside the chip. We present and compare theoretical predictions together with the results of post-layout simulation and the measurements obtained.