Metalorganic growth of CdTe and HgCdTe epitaxial films at a reduced substrate temperature using diisopropyltelluride

Epitaxial films of CdTe and HgCdTe have been grown using a new metalorganic compound, diisopropyltelluride. Diisopropyltelluride is found to be less stable than the conventionally used diethyltelluride and consequently makes possible HgCdTe growth at a lower substrate temperature. Specular CdTe and HgCdTe epitaxial films have been obtained with moderate growth rates at substrate temperatures as low as 350 °C. Preliminary infrared and Hall measurements are encouraging for the application of this compound for HgCdTe growth. The reduced stability of diisopropyltelluride compared to diethyltelluride is consistent with a stability model for branched hydrocarbon molecules.