In this work we study the optimization of laser‐fired contact (LFC) processing parameters, namely laser power and number of pulses, based on the electrical resistance measurement of an aluminum single LFC point. LFC process has been made through four passivation layers that are typically used in c‐Si and mc‐Si solar cell fabrication: thermally grown silicon oxide (SiO 2 ), deposited phosphorus‐doped amorphous silicon carbide (a‐SiC x /H( n )), aluminum oxide (Al 2 O 3 ) and silicon nitride (SiN x /H) films. Values for the LFC resistance normalized by the laser spot area in the range of 0.65–3 mΩ cm 2 have been obtained.
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Ortega et al. (2011) studied this question.
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