It is convenient to define the spin-torque switching efficiency in nanostructured magnetic tunnel junctions as the ratio between the free-layers thermal activation barrier height Eb and the threshold switching current Ic0. Recent device exploration has led to occasional observations of spin-torque induced magnetic switching efficiency in magnetic tunnel junctions that exceeds the macrospin limit by a factor of 2--10. In this paper we examine the possible origins for such enhancement, and materials properties that may allow the full realization of such enhancements.
No takes yet. Share an insight, caveat, or question.
Sun et al. (2013) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: