We present a dispersion engineered slow light silicon-based photonic crystal waveguide PIN modulator. Low-dispersion slow light transmission over 18 nm bandwidth under the silica light line with a group index of 26.5 is experimentally confirmed. We investigate the variations of the modulator figure of merit, V(π) × L, as a function of the optical carrier wavelength over the bandwidth of the fundamental photonic crystal waveguide defect mode. A large signal operation with a record low maximum V(π )× L of 0.0464 V · mm over the low-dispersion optical spectral range is demonstrated. We also report the device operation at 2 GHz.
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Hosseini et al. (2012) studied this question.
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