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This paper presents a design procedure for a wideband 6-18-GHz monolithic microwave integrated circuit highpower amplifier (HPA) in 0.25-μm AlGaAs-InGaAs pHEMT technology. The design is mainly focused on the realization of the passive circuits to provide the required low-loss and wideband impedance transformation networks. The two-stage GaAs HPA achieves an average output power of 39.6 dBm and a peak output power of 40.5 dBm at 11 GHz, in pulsed mode operation, with a small-signal gain of S21> 10 dB over the entire bandwidth. The average power added efficiency (PAE) is 22%, with a peak PAE of 29% at 11 GHz. The HPA chip occupies an area of 5 × 3.6 mm2. The achieved output power and the corresponding power density of 0.51 W/mm2are amongst the highest reported values in wideband GaAs HPAs.
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Meghdadi et al. (2017) studied this question.
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