Datasheet Driven Switching Loss, Turn-ON/OFF Overvoltage, di/dt, and dv/dt Prediction Method for SiC MOSFET

This article presents quick analytical prediction methods of switching loss, turn-on/offovervoltage, di/dt,and dv/dtfor SiC metal–oxide–semiconductor field-effect transistor based on device datasheet. First, the switching process is analyzed and the simplification principles are discussed based on charge conservation and flux conservation. Second, the analytical equations of switching loss, turn-on/offovervoltage, di/dt, and dv/dtare derived. Third, experimental results under different operating conditions are presented to validate the proposed methods. It is found that the average prediction error is 10.11%. Finally, relationships between switching performance and different parameters, such as parasitic capacitance, parasitic inductance, dc-voltage, and load current, are analyzed and summarized based on the proposed prediction methods.