Characterization of CdO:Cu Nano Thin Films Prepared Using Dual Solution Synthesis for possible Photonic Devices and Optoelectronic Applications

CdO:Cu thin films were successfully deposited on glass substrates by Successive Ionic layer adsorption Reaction method. The chemical compositions and thickness were obtained by Rutherford backscattering spectrometer. Samples C1 and C2 have elemental compositions of Cu:1.64%, O:56.00%, Cd:6.35% and Cu:1.57%, O:53.00%, Cd:7.50% respectively. The films optical properties were characterized using UV double beam spectrophotometer series 1800, for transmittance measurements and other optical properties such as Absorbance, reflectance, absorption coefficient, refractive index, were determined using appropriate equations. The transmittance spectrum shows that the films of samples C1(black)) and C2(red) have good transparency in the UV (16%-60%) for sample C1 and good transmittance (27%-70%) for sample C2 in the wavelength range (320nm-400nm). The high transmittance (61%-59%) for sample C1 from the visible region(400nm-700nm), becomes almost linear through the near infrared region of electromagnetic spectrum. The transmittance of sample C2 increases as wavelength increases up to the near infrared region of electromagnetic. In the near-infrared region, sample C2 has high transmittance (81%-85%) within the wavelength of 700nm- 1000nm of the region of electromagnetic spectrum. This makes these alloyed films good materials for UV filter and transparent electrode. The energy band gaps of samples C1 and C2 are evaluated by extrapolating the linear portion of the plot (αh)2 against photon energy hat (αh)2 = 0 where α is the absorption coefficient. The direct band gap values of 3.80eV and 3.75eV are obtained for samples C1 and C2 respectively. The average band gap value 3.78eV. The wide band gap obtained in this work makes the alloy of CdO:Cu a good material for the production of laser diodes and light emitting diodes (LEDs) used to produce field effect transistors where P-n junction may not be required if produced for solar applications. It can also be used to produce field effect transistors where P-n junction may not be required if produced for solar applications.