In1−x−yGaxAlyAs is grown lattice matched by low pressure metalorganic chemical vapor deposition on InP and characterized using low temperature photoluminescence. Compositional information is obtained from energy dispersive x-ray spectroscopy and the band gap is determined as a function of Al content. We obtain Eg(y)=0.81+0.036y+2.96y2 eV at 2 K. For Al compositions larger than 22% a type II staggered band lineup is observed. At this point the conduction band discontinuity disappears (ΔEc=0). The conduction band discontinuity as a function of the Al composition is ΔEc(y)=0.245−1.179y+0.3y2 eV.
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Böhrer et al. (1993) studied this question.
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